This chapter explores avalanche photodiodes (APDs), focusing on their internal multiplication of primary photocurrent, which enhances receiver sensitivity. It details the avalanche effect through impact ionization and explains the structure and function of reach-through avalanche photodiodes (RAPDs), including ionization rates and multiplication factors.
Internal multiplication of primary photocurrent increases receiver sensitivity
Carrier multiplication occurs through impact ionization
RAPDs utilize a high electric field region for carrier multiplication
Ionization rates differ for electrons and holes
An extremely high electric field region is created in APDs